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irg4bc30fd-spbf www.irf.com 1
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e g n-channel c fast copack igbt insulated gate bipolar transistor with hyperfast diode

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,&/&$'(3# d 2 pak absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 31 i c @ t c = 100c continuous collector current 17 a i cm pulse collector current (ref.fig.c.t.5) 124 i lm clamped inductive load current 124 i f @ t c = 100c diode continuous forward current 12 i fm diode maximum forward current 120 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 100 w p d @ t c = 100c maximum power dissipation 42 t j operating junction and -55 to +150 c t stg storage temperature range thermal / mechanical characteristics parameter min. typ. max. units r jc junction-to-case- igbt ??? ??? 1.2 c/w r cs case-to-sink, flat, greased surface ??? 0.50 ??? r ja junction-to-ambient (pcb mounted,steady state) ??? ??? 40 wt weight ??? 2.0 (0.07) ??? g (oz.)
irg4bc30fd-spbf 2 www.irf.com electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)ces collector-to-emitter breakdown voltage 600??v v ge = 0v, i c = 250a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ?0.69?v/c v ge = 0v, i c = 1ma ? 1.59 1.8 i c = 17a v ge = 15v v ce(on) collector-to-emitter voltage ? 1.99 ? v i c = 31a see fig. 2, 5 ?1.7? i c = 17a, t j = 150c v ge(th) gate threshold voltage 3.0 ? 6.0 v v ce = v ge , i c = 250a ? v ge(th) / ? t j threshold voltage temp. coefficient ? -11 ? mv/ c v ce = v ge , i c = 250 a gfe forward transconductance 6.1 10 ? s v ce = 100v, i c = 17a i ces zero gate voltage collector current ? ? 250 a v ge = 0v, v ce = 600v ? ? 2500 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop ? 1.4 1.7 v i f = 12a see fig. 13 ?1.31.6 i f = 12a, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) ? 51 77 i c = 17a q ge gate-to-emitter charge (turn-on) ? 7.9 12 nc v cc = 400v see fig. 8 q gc gate-to-collector charge (turn-on) ? 19 28 v ge = 15v t d(on) turn-on delay time ? 42 ? t j = 25c t r rise time ? 26 ? ns i c = 17a, v cc = 480v t d(off) turn-off delay time ? 230 350 v ge = 15v, r g = 23 ? t f fall time ? 160 230 energy losses inlcude "tail" and e on turn-on switching loss ? 0.63 ? diode reverse recovery. e off turn-off switching loss ? 1.39 ? mj see fig. 9, 10, 11, 18 e ts total switching loss ? 2.02 3.9 t d(on) turn-on delay time ? 42 ? t j = 150c see fig. 9,10,11,18 t r rise time ? 27 ? ns i c = 17a, v cc = 480v t d(off) turn-off delay time ? 310 ? v ge = 15v, r g = 23 ? t f fall time ? 310 ? energy losses inlcude "tail" and e ts total switching loss ? 3.2 ? mj diode reverse recovery. l e internal emitter inductance ? 7.5 ? nh measured 5mm from package c ies input capacitance ? 1100 ? v ge = 0v c oes output capacitance ? 74 ? pf v cc = 30v see fig. 7 c res reverse transfer capacitance ? 14 ? f = 1.0mhz t rr diode reverse recovery time ? 42 60 ns t j = 25c see fig. ?80120 t j = 125c 14 i rr diode peak reverse recovery current ? 3.5 6.0 a t j = 25c see fig. ?5.610 t j = 125c 15 q rr diode reverse recovery charge ? 80 180 nc t j = 25c see fig. 220 600 t j = 125c 16 di (rec)m /dt diode peak rate of fall of recovery ? 180 ? a/s t j = 25c see fig. during t b ?120? t j = 125c 17 v r = 200v di/dt 200a/s conditions conditions i f = 12a
irg4bc30fd-spbf www.irf.com 3
irg4bc30fd-spbf 4 www.irf.com
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irg4bc30fd-spbf 6 www.irf.com
irg4bc30fd-spbf www.irf.com 7
irg4bc30fd-spbf 8 www.irf.com same type device as d.u.t. d.u.t. 430f 80% of vce

t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+5s vce ic dt 90% vge +vge eoff = !"
vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery waveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt
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irg4bc30fd-spbf www.irf.com 9 vg gate signal device under tes t current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v fig. 19 - clamped inductive load test circuit fig. 20 - pulsed collector current test circuit fig.18e - macro waveforms for figure 18a's test circuit 0 - vcc r l icm vcc = 480f pulsed collector current test circuit
irg4bc30fd-spbf 10 www.irf.com

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irg4bc30fd-spbf www.irf.com 11 notes: ()* +,-)% $.#%./012)&+,' !, %( ' +,3,45( +6 ? &7' 8% $.# !,4 -.0 , 9 . 8% $.# ,4 % # when mounted on 1" square pcb (fr-4 or g-10 material). data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 01/2010

dimensions are shown in millimeters (inches) 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.

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